ST92F124 datasheet(381/429 Pages) STMICROELECTRONICS

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ST92F124/F150/F250 - ELECTRICAL CHARACTERISTICS

FLASH / E3 TM SPECIFICATIONS

(VDD = 5V ± 10%, TA = –40°C to +125°C, unless otherwise specified

Note:

(1) The maximum value depends on the number of E3 cycles/sector as shown in Figure 160. This maximum value corresponds to the worst

case E3 TM page update, 1 of 4 consecutive write operations at the same E3 TM address (refer to AN1152). In any case, the page update

operation starts with the write operation of the data (160

µs max). Then, one of the 4 erase operations of the unused sector may be per-

formed, leading to the worst case.

(2) Relational calculation between E3 TM page updates and single byte cycling is provided in a dedicated STMicroelectronics Application

Note (ref. AN1152).

Figure 160. Evolution of Worst Case E3 Page Update Time

Parameter

Min

Typ

Max

Unit

MAIN FLASH

Byte Program

250

µs

128 kbytes Flash Program

1.3

64 kbytes Flash Sector Erase

1.5

128 kbytes Flash Chip Erase

Erase Suspend Latency

µs

Recovery from Power-Down

µs

E3 TM

16 bytes Page Update

(1k E3 TM) -40°C +105°C

200 (1)

RELIABILITY

Flash Endurance 25°C

10000

cycles

Flash Endurance

3000

E3 TM Endurance

800000 (2)

page updates

Data Retention

years

Page Update Max

TA=25°C

TA=125°C

400

800

k page updates

100

200

300

TA=105°C

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