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BFQ81 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BFQ81
Description  Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BFQ81 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon NPN Power Transistor
BFQ81
www.iscsemi.com
1
DESCRIPTION
· Collector-Emitter Breakdown Voltage
-V(BR)CEO= 16V(Min)
· Intendedfor RF wideband amplifier applications
such as satellite TV systemsand RF portable communication
equipment with signal frequenciesup to 2 GHz.
APPLICATIONS
·
Low noise figure
·
Gold metallization ensures excellent reliability
·
High power gain
·
High transition frequency
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
25
V
VCEO
Collector-Emitter Voltage
16
V
VEBO
Emitter-Base Voltage
2.5
V
IC
Collector Current-Continuous
120
mA
PC
Collector Power Dissipation
@TC=25℃
250
mW
TJ
Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃


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