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APT30M61BLL Datasheet(PDF) 4 Page - Advanced Power Technology

Part # APT30M61BLL
Description  POWER MOS 7 R MOSFET
PDF  5 Pages
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Manufacturer  ADPOW [Advanced Power Technology]
Direct Link  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT30M61BLL Datasheet(HTML) 4 Page - Advanced Power Technology

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V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
5
10
50
100
300
0
10
20
30
40
50
0
10
20
30
40
50 60
70 80
90 100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
216
100
10
1
16
14
12
10
8
6
4
2
0
10,000
5,000
1,000
100
10
200
100
50
10
5
1
TJ =+150°C
TJ =+25°C
Coss
Ciss
Crss
TC=+25°C
TJ =+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
10mS
1mS
100µS
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 200V
R
G
= 5
Ω
T
J
= 125°C
L = 100µH
Eon
Eoff
tr
tf
10
20
30
40
50
60
70
80
90
10
20
30
40
50
60
70
80
90
10
20
30
40
50
60
70
80
90
0
5
10
15
20
25
30
35 40
45
50
V
DD
= 200V
I
D
= 54A
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
50
40
30
20
10
0
900
800
700
600
500
400
300
200
100
0
V
DD
= 200V
R
G
= 5
Ω
T
J
= 125°C
L = 100µH
V
DD
= 200V
R
G
= 5
Ω
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
90
80
70
60
50
40
30
20
10
0
1200
1000
800
600
400
200
0
VDS = 150V
VDS = 60V
VDS = 240V
I
D
= 54
APT30M61BLL - SLL
Typical Performance Curves



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