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TTD1410B Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # TTD1410B
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

TTD1410B Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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1
isc Silicon NPN Power Transistor
TTD1410B
DESCRIPTION
·
Low saturation voltage.
·
High reliability
·
High breakdown voltage
APPLICATIONS
·
High-Voltage Switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
6.25
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IB
Base current
1
A
PC
Collector Power Dissipation @TC=25℃
25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃


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