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ZXTP07012EFF Datasheet(PDF) 4 Page - Zetex Semiconductors |
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ZXTP07012EFF Datasheet(HTML) 4 Page - Zetex Semiconductors |
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4 / 6 page ![]() ZXTP07012EFF Issue 1 - September 2006 4 www.zetex.com © Zetex Semiconductors plc 2006 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO -12 -23 V IC = -100 A Collector-emitter breakdown voltage (base open) BVCEO -12 -16 V IC = -10mA (*) * NOTES: (*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. Emitter-base breakdown voltage BVEBO -7 -8.4 V IE = -100 A Collector-base cut-off current ICBO <-1 -50 nA VCB = -10V -20 AVCB = -10V, Tamb= 100°C Emitter-base cut-off current IEBO <-1 -50 nA VEB = -5.6V Collector-emitter saturation voltage VCE(sat) -80 -100 mV IC = -0.5A, IB = -2.5mA(*) -60 -75 mV IC = -1A, IB = -100mA(*) -130 -165 mV IC = -1A, IB = -5mA(*) -250 -350 mV IC = -2A, IB = -10mA(*) -260 -340 mV IC = -4A, IB = -80mA(*) Base-emitter saturation voltage VBE(sat) -945 -1050 mV IC = -4A, IB = -80mA(*) Base-emitter turn-on voltage VBE(on) -850 -950 mV IC = -4A, VCE = -2V(*) Static forward current transfer ratio hFE 500 750 1500 IC = -10mA, VCE = -2V(*) 400 570 IC = -1A, VCE = -2V(*) 230 320 IC = -4A, VCE = -2V(*) 150 210 IC = -6A, VCE = -2V(*) Transition frequency fT 100 250 MHz IC = -50mA, VCE = -5V f = 50MHz Input capacitance Cibo 223 pF VCB = -0.5V, f = 1MHz(*) Output capacitance Cobo 24 30 pF VCB = -10V, f = 1MHz(*) Delay time td 12.8 ns VCC = -10V. IC = -500mA, IB1 = IB2= -50mA. Rise time tr 15.6 ns Storage time ts 240 ns Fall time tf 92.8 ns |
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