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ZXTP07012EFF Datasheet(PDF) 4 Page - Zetex Semiconductors

Part # ZXTP07012EFF
Description  12V, SOT23F, PNP medium power transistor
PDF  6 Pages
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Manufacturer  ZETEX [Zetex Semiconductors]
Direct Link  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

ZXTP07012EFF Datasheet(HTML) 4 Page - Zetex Semiconductors

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ZXTP07012EFF
Issue 1 - September 2006
4
www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BVCBO
-12
-23
V
IC = -100 A
Collector-emitter breakdown
voltage (base open)
BVCEO
-12
-16
V
IC = -10mA (*) *
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
Emitter-base breakdown
voltage
BVEBO
-7
-8.4
V
IE = -100 A
Collector-base cut-off current ICBO
<-1
-50
nA
VCB = -10V
-20
AVCB = -10V, Tamb= 100°C
Emitter-base cut-off current
IEBO
<-1
-50
nA
VEB = -5.6V
Collector-emitter saturation
voltage
VCE(sat)
-80
-100
mV
IC = -0.5A, IB = -2.5mA(*)
-60
-75
mV
IC = -1A, IB = -100mA(*)
-130
-165
mV
IC = -1A, IB = -5mA(*)
-250
-350
mV
IC = -2A, IB = -10mA(*)
-260
-340
mV
IC = -4A, IB = -80mA(*)
Base-emitter saturation
voltage
VBE(sat)
-945
-1050
mV
IC = -4A, IB = -80mA(*)
Base-emitter turn-on voltage
VBE(on)
-850
-950
mV
IC = -4A, VCE = -2V(*)
Static forward current
transfer ratio
hFE
500
750
1500
IC = -10mA, VCE = -2V(*)
400
570
IC = -1A, VCE = -2V(*)
230
320
IC = -4A, VCE = -2V(*)
150
210
IC = -6A, VCE = -2V(*)
Transition frequency
fT
100
250
MHz
IC = -50mA, VCE = -5V
f = 50MHz
Input capacitance
Cibo
223
pF
VCB = -0.5V, f = 1MHz(*)
Output capacitance
Cobo
24
30
pF
VCB = -10V, f = 1MHz(*)
Delay time
td
12.8
ns
VCC = -10V.
IC = -500mA,
IB1 = IB2= -50mA.
Rise time
tr
15.6
ns
Storage time
ts
240
ns
Fall time
tf
92.8
ns



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