APT50M85LVR datasheet(2/4 Pages) ADPOW

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DYNAMIC CHARACTERISTICS

APT50M85B2VR_LVR

Symbol

θJC

θJA

MIN

TYP

MAX

0.20

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

THERMALCHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current 1 (Body Diode)

Diode Forward Voltage 2 (V

GS = 0V, IS = -56A)

Reverse Recovery Time (I

S = -56A, dlS/dt = 100A/µs)

Reverse Recovery Charge (I

S = -56A, dlS/dt = 100A/µs)

Peak Diode Recovery dv/dt 5

UNIT

Amps

Volts

µC

V/ns

MIN

TYP

MAX

224

1.3

680

Symbol

dv/dt

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting Tj = +25°C, L = 1.91mH, RG = 25Ω, Peak IL = 56A

5 dv

/dt numbers reflect the limitations of the test circuit rather than the

device itself. I

S ≤ -ID56A

di/dt ≤ 700A/µs V

R ≤ 500V

J ≤ 150°C

APT Reserves the right to change, without notice, the specifications and information contained herein.

Symbol

iss

oss

rss

d(on)

d(off)

Test Conditions

GS = 0V

DS = 25V

f = 1 MHz

GS = 10V

DD = 250V

D = 56A @ 25°C

GS = 15V

DD = 250V

D = 56A @ 25°C

G = 0.6Ω

MIN

TYP

MAX

10500

1290

600

420

200

UNIT

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Note:

Duty Factor D = t1/t2

Peak TJ = PDM x ZθJC + TC

SINGLE PULSE

10-5

10-4

10-3

10-2

10-1

1.0

RECTANGULARPULSEDURATION(SECONDS)

FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION

0.25

0.20

0.15

0.10

0.05

0.5

0.1

0.3

0.7

0.9

0.05

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