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IXYN82N120C3 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # IXYN82N120C3
Description  IGBT
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXYN82N120C3 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  IXYN82N120C3 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IXYN82N120C3 Datasheet HTML 2Page - Inchange Semiconductor Company Limited IXYN82N120C3 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISGM2059
eq IXYN82N120C3
IGBT
www.iscsemi.com
1
DESCRIPTION
· Low Saturation Voltage:VCE(sat)=3.2V@IC= 82A
· High Power Density
· Low Gate Drive Requirement
APPLICATIONS
· Uninterrupted Power Supply
· Motor Drives
· PFC Circuits
· Welding Machines
· SMPS
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1200
V
VGES
Gate-Emitter Voltage
±
20
V
IC
Collector Current-Continuous
@ TC=25℃
120
A
IC
Collector Current-Continuous
@ TC=110℃
66
A
ICM
Pulsed Collector Current
380
A
PD
Power Dissipation @TC=25℃
600
W
Tj
Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.25
℃
/W


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