BUV21 datasheet(2/4 Pages) ONSEMI

2 / 4 page

BUV21

http://onsemi.com

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS (Note 1)

Collector−Emitter Sustaining Voltage

(IC = 200 mA, IB = 0, L = 25 mH)

VCEO(sus)

200

Vdc

Collector Cutoff Current at Reverse Bias:

(VCE = 250 V, VBE = −1.5 V)(TC = 25_C unless otherwise noted)

(VCE = 250 V, VBE = −1.5 V, TC = 125_C)

ICEX

3.0

12.0

mAdc

Collector−Emitter Cutoff Current

(VCE = 160 V)

ICEO

3.0

mAdc

Emitter−Base Reverse Voltage

(IE = 50 mA)

VEBO

Emitter−Cutoff Current

(VEB = 5 V)

IEBO

1.0

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

(VCE = 20 V, t = 1 s)

(VCE = 140 V, t = 1 s)

IS/b

0.15

Adc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 12 A, VCE = 2 V)

(IC = 25 A, VCE = 4 V)

hFE

Collector−Emitter Saturation Voltage

(IC = 12 A, IB = 1.2 A)

(IC = 25 A, IB = 3 A)

VCE(sat)

0.6

1.5

Vdc

Base−Emitter Saturation Voltage

(IC = 25 A, IB = 3 A)

VBE(sat)

1.5

Vdc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product

(VCE = 15 V, IC = 2 A, f = 4 MHz)

8.0

MHz

SWITCHING CHARACTERISTICS (Resistive Load)

Turn-on Time

(IC = 25 A, IB1 = IB2 = 3 A,

VCC = 100 V, RC = 4 W)

ton

1.0

Storage Time

1.8

Fall Time

0.4

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

Figure 1. Power Derating

1.0

TC, TEMPERATURE (°C)

160

200

0.4

0.8

0.6

0.2

120

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