PDTC143ES datasheet(2/8 Pages) PHILIPS

2 / 8 page

1998 May 20

Philips Semiconductors

Product speciﬁcation

NPN resistor-equipped transistor

PDTC143ES

FEATURES

• Built-in bias resistors R1 and R2

(typ. 4.7 k

Ω each)

• Simplification of circuit design

• Reduces number of components

and board space.

APPLICATIONS

• Especially suitable for space

reduction in interface and driver

circuits

• Inverter circuit configurations

without use of external resistors.

DESCRIPTION

NPN resistor-equipped transistor in a

TO-92; SOT54 plastic package.

PNP complement: PDTA143ES.

PINNING

DESCRIPTION

base/input

collector/output

emitter/ground

Fig.1 Simplified outline (TO-92; SOT54) and symbol.

handbook, halfpage

MAM364

Fig.2

Equivalent inverter

symbol.

MGL136

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCEO

collector-emitter voltage

open base

−−

output current (DC)

−−

100

ICM

peak collector current

−−

100

Ptot

total power dissipation

Tamb ≤ 25 °C

−−

500

hFE

DC current gain

IC = 10 mA; VCE =5V

−−

input resistor

3.3

4.7

6.1

Ω

resistor ratio

0.8

1.2

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