P Channel Electrical Characteristics (TAmbient=25ºC unless noted otherwise)

Symbol

Parameters

Conditions

Min.

Typ.

Max. Unit

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250μA

-20

Volt

IDSS

Zero Gate Voltage Drain Current

VDS=-20V, VGS=0V

-1

μA

IGSS

Gate-Body Leakage Current

VGS=±12V, VDS=0V

±100

nA

On Characteristics(Note 3)

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=250μA

-0.5

-0.75

-1.2

Volt

RDS(ON)

Drain-Source On-State Resistance

VGS=-4.5V, ID=-3A

67

90

Ω

VGS=-2.5V, ID=-3A

9

120

Ω

gFS

Forward Transconductance

VDS=-5V, ID=-3A

9.5

S

Dynamic Characteristics(Note 4)

Ciss

Input Capacitance

VDD=-10V, VGS=0V ,

F=1MHz

522

pF

Coss

Output Capacitance

55

pF

Crss

Reverse Transfer Capacitance

40

pF

Switching Characteristics(Note 4)

td(on)

Turn-on Delay Time

VDD=-10V, VGS=-4.5V,

RGEN=3.3Ω

10

nS

tr

Turn-on Rise Time

4

nS

td(off)

Turn-Off Delay Time

34

nS

tf

Turn-Off Fall Time

5

nS

Qg

Total Gate Charge

VDS=-10V, ID=-3A,

VGS=-4.5V

7

nC

Qgs

Gate-Source Charge

1

nC

Qgd

Gate-Drain Charge

1.8

nC

Drain-Source Diode Characteristics

VSD

Diode Forward Voltage

(Note 3)

VGS=0V, IS=-1A

1.2

V

Notes: 5. Repetitive Rating: Pulse width limited by maximum junction temperature

6. Surface mounted on FR4 Board, t≤10 sec

7. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

8. Guaranteed by design, not subject to production

 

 

 

 

N/P Channel Enhancement MOSFET

B C2003DW