PDTC143XE datasheet(4/8 Pages) PHILIPS

4 / 8 page

1999 May 21

Philips Semiconductors

Product speciﬁcation

NPN resistor-equipped transistor

PDTC143XE

Fig.3

DC current gain as a function of collector

current; typical values.

VCE =5V.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

103

102

MDA849

10−1

110

IC (mA)

hFE

102

(3)

(1)

(2)

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

103

102

MDA850

110

IC (mA)

VCEsat

(mV)

102

(2)

(3)

(1)

Fig.5

Input-off voltage as a function of collector

current; typical values.

VCE =5V.

(1) Tamb = −40 °C.

(2) Tamb =25 °C.

(3) Tamb = 100 °C.

handbook, halfpage

Vi(off)

(V)

10−1

MDA851

10−2

(1)

10−1

IC (mA)

(2)

(3)

Fig.6

Input-on voltage as a function of collector

current; typical values.

VCE = 0.3 V.

(1) Tamb = −40 °C.

(2) Tamb =25 °C.

(3) Tamb = 100 °C.

handbook, halfpage

Vi(on)

(V)

10−1

MDA852

10−1

102

110

IC (mA)

(1)

(2)

(3)

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