PDTC143XT datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 20

Philips Semiconductors

Product speciﬁcation

NPN resistor-equipped transistor

PDTC143XT

THERMAL CHARACTERISTICS

Note

1. Refer to SOT23 standard mounting conditions.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =50V

−−

100

ICEO

collector cut-off current

IB = 0; VCE =30V

−−

µA

IB = 0; VCE =30V; Tj = 150 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

600

µA

hFE

DC current gain

IC = 10 mA; VCE =5V

−−

VCEsat

collector-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

−−

100

Vi(off)

input-off voltage

IC = 100 µA; VCE =5V

−−

0.3

Vi(on)

input-on voltage

IC = 20 mA; VCE = 0.3 V

2.5

−−

input resistor

3.3

4.7

6.1

Ω

resistor ratio

1.7

2.1

2.6

collector capacitance

IE =ie = 0; VCB =10V; f=1MHz

−−

2.5

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