PEMB10 datasheet(4/8 Pages) PHILIPS

Part #	PEMB10

Description	PNP resistor-equipped double transistor R1 = 2.2 kohm, R2 = 47 kohm

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 8 page

2001 Sep 14

Philips Semiconductors

Preliminary speciﬁcation

PNP resistor-equipped double transistor

R1 = 2.2 k

Ω,R2=47kΩ

PEMB10

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor

ICBO

collector cut-off current

IE = 0; VCB = −50 V

−−−100

ICEO

collector cut-off current

IB = 0; VCE = −50 V

−−−1

µA

IB = 0; VCE = −30 V; Tj = 150 °C

−−−50

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−180

µA

hFE

DC current gain

IC = −10 mA; VCE = −5 V

100

−−

VCEsat

collector-emitter saturation voltage

IC = −5 mA; IB = −0.25 mA

−−−100

Vi(off)

input-off voltage

IC = −100 µA; VCE = −5V

−−0.6

−0.5

Vi(on)

input-on voltage

IC = −5 mA; VCE = −0.3 V

−1.1

−0.75 −

input resistor

1.54

2.2

2.86

Ω

resistor ratio

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−−

3pF

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