Electrical Characteristics (TAmbient=25ºC unless noted otherwise)

Symbol

Parameters

Conditions

Min.

Typ.

Max. Unit

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0 V, ID=250μA

60

Volt

IDSS

Zero Gate Voltage Drain Current

VDS=60V, VGS=0V

1

μA

IGSS

Gate-Body Leakage Current

VGS=±20V, VDS=0V

±10

μA

On Characteristics(Note 3)

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=250μA

0.8

1.3

2.0

Volt

RDS(ON)

Drain-Source On-State Resistance

VGS=10V, ID=500mA

1.6

2.3

Ω

VGS=4.5V, ID=200mA

2.0

2.7

Ω

Dynamic Characteristics(Note 4)

Ciss

Input Capacitance

VDD=25V, VGS=0V ,

F=1MHz

11

pF

Coss

Output Capacitance

8.5

pF

Crss

Reverse Transfer Capacitance

2.0

pF

Switching Characteristics(Note 4)

td(on)

Turn-on Delay Time

VDD=30V, ID=0.2A

VGS=10V, RGEN=10Ω

5

nS

tr

Turn-on Rise Time

13.7

nS

td(off)

Turn-Off Delay Time

10

nS

tf

Turn-Off Fall Time

13.5

nS

Qg

Total Gate Charge

VDS=30V, ID=0.3A,

VGS=10V

0.7

nC

Qgs

Gate-Source Charge

2

nC

Qgd

Gate-Drain Charge

0.2

nC

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Surface mounted on FR4 Board, t≤10 sec

3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

4. Guaranteed by design, not subject to production

2N7002D3

N-Channel Enhancement MOSFET