PEMB4 datasheet(3/8 Pages) PHILIPS

3 / 8 page

2001 Sep 14

Philips Semiconductors

Preliminary speciﬁcation

PNP resistor-equipped double transistor

R1=10k

Ω, R2 = open

PEMB4

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Notes

1. Transistor mounted on an FR4 printed-circuit board.

2. The only recommended soldering method is reflow soldering.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor

VCBO

collector-base voltage

open emitter

−−50

VCEO

collector-emitter voltage

open base

−−50

VEBO

emitter-base voltage

open collector

−−5V

output current (DC)

−−100

ICM

peak collector current

−−100

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

200

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

300

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

notes 1 and 2

416

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor

ICBO

collector cut-off current

IE = 0; VCB = −50 V

−−−100

ICEO

collector cut-off current

IB = 0; VCE = −50 V

−−−1

µA

IB = 0; VCE = −30 V; Tj = 150 °C

−−−50

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−100

hFE

DC current gain

IC = −1 mA; VCE = −5 V

100

−

600

VCEsat

collector-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA

−−−300

input resistor

Ω

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−−

5pF

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