PEMD12 datasheet(4/12 Pages) PHILIPS

4 / 12 page

2001 Nov 07

Philips Semiconductors

Product speciﬁcation

NPN/PNP resistor-equipped transistors

PEMD12

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor for the PNP transistor with negative polarity

ICBO

collector-base cut-off current

VCB = 50 V; IE =0

−−

100

ICEO

collector-emitter cut-off current

VCE = 50 V; IB =0

−−

µA

VCE = 30 V; IB = 0; Tj = 150 °C

−−

µA

IEBO

emitter-base cut-off current

VEB =5V; IC =0

−−

µA

hFE

DC current gain

VCE =5V; IC =5mA

−−

VCEsat

saturation voltage

IC = 10 mA; IB = 0.5 mA

−−

150

Vi(off)

input off voltage

VCE =5V; IC = 100 µA

−

1.2

0.8

Vi(on)

input on voltage

VCE = 0.3 V; IC = 2 mA

1.6

−

input resistor

Ω

resistor ratio

0.8

1.2

collector capacitance

IE =ie = 0; VCB =10V;

f = 1 MHz

TR1 (NPN)

−−

2.5

TR2 (PNP)

−−

3pF

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