PEMD48 datasheet(4/12 Pages) PHILIPS

4 / 12 page

2001 Nov 07

Philips Semiconductors

Product speciﬁcation

NPN/PNP resistor-equipped transistors;

R1, R2 = 47 k

Ω, 47 kΩ and 2.2 kΩ, 47 kΩ

PEMD48

CHARACTERISTICS

Tamb =25 °C; unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor; for the PNP transistor with negative polarity

ICBO

collector cut-off current

IE = 0; VCB =50V

−−

100

ICEO

collector cut-off current

IB = 0; VCE =50V

−−

µA

IB = 0; VCE = 30 V; Tj = 150 °C

−−

µA

Transistor TR1 (NPN)

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

µA

hFE

DC current gain

IC = 5 mA; VCE =5V

−−

VCEsat

collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA

−−

150

Vi(off)

input off voltage

IC = 100 µA; VCE =5V

−

1.2

0.8

Vi(on)

input on voltage

IC = 2 mA; VCE = 0.3 V

0.6

−

input resistor

Ω

resistor ratio

0.8

1.2

collector capacitance

IE =ie = 0; VCB =10V; f=1MHz

−−

2.5

Transistor TR2 (PNP)

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−180

µA

hFE

DC current gain

IC = −10 mA; VCE = −5 V

100

−−

VCEsat

collector-emitter saturation voltage IC = −5 mA; IB = −0.25 mA

−−−100

Vi(off)

input off voltage

IC = −100 µA; VCE = −5V

−−0.6

−0.5

Vi(on)

input on voltage

IC = −5 mA; VCE = −0.3 V

−1.1

−0.75 −

input resistor

1.54

2.2

2.86

Ω

resistor ratio

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−−

3pF

--------

PEMD48 Datasheet(PDF) 4 Page - NXP Semiconductors

PEMD48 Datasheet(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL