PEMD9 datasheet(6/12 Pages) PHILIPS

6 / 12 page

2001 Oct 22

Philips Semiconductors

Preliminary speciﬁcation

NPN/PNP resistor-equipped transistors;

R1=10k

Ω, R2 = 47 kΩ

PEMD9

handbook, halfpage

103

102

MHC033

−10−1

−1

−10

hFE

IC (mA)

−102

(1)

(3)

(2)

Fig.7

DC current gain as a function of collector

current; typical values.

TR2 (PNP); VCE = −5V.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

−102

−103

−10

MHC034

−10−1

−1

−10

VCEsat

(mV)

IC (mA)

−102

(1)

(2)

(3)

Fig.8

Collector-emitter saturation voltage as a

function of collector current; typical values.

TR2 (PNP); IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

−2

MHC035

−0.4

−0.8

−1.2

−1.6

−10−1

−10−2

−1

Vi(off)

(V)

−10

IC (mA)

(1)

(3)

(2)

Fig.9

Input-off voltage as a function of collector

current; typical values.

TR2 (PNP); VCE = −5V.

(1) Tamb = −40 °C.

(2) Tamb =25 °C.

(3) Tamb = 100 °C.

handbook, halfpage

MHC036

−10−1

−102

−10−1

−10

−1

−10

Vi(on)

(V)

IC (mA)

−102

(1)

(2)

(3)

Fig.10 Input-on voltage as a function of collector

current; typical values.

TR2 (PNP); VCE = −0.3 V.

(1) Tamb = −40 °C.

(2) Tamb =25 °C.

(3) Tamb = 100 °C.

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