BC2321 datasheet(2/4 Pages) GWSEMI

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Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-source breakdown voltage

V(BR) DSS

VGS = 0V, ID =-10µA

-20

Gate-source leakage

IGSS

VDS =0V, VGS =

±12V

±100

Zero Gate voltage drain current

IDSS

VDS =-16V, VGS =0V

-1.0

µA

Gate-source threshold voltage

VGS(th)

VDS =VGS, ID =-250µA

-0.4

-0.9

VGS =-4.5V, ID =-3.3A

0.057

VGS =-2.5V, ID =-2.8A

0.076

Drain-source on-state resistance

RDS(on)

VGS =-1.8V, ID =-2.3A

0.110

Ω

Forward tranconductance

gfS

VDS =-5V, ID =-3.3A

Forward diode voltage

VSD

VGS =0V,IS=-1.6A

-1.2

Dynamic

Input capacitancea,b

Ciss

715

Output capacitancea,b

Coss

170

Reverse transfer capacitancea,b

Crss

VDS =-6V,VGS =0V,f =1MHz

120

Total Gate chargea

Gate-Source chargea

Qgs

1.2

Gate-Drain chargea

Qgd

VDS =-6V,VGS =-4.5V,ID=-3.3A

2.2

Switchinga,b

Turn-on delay Time

td(on)

Rise time

Turn-off delay time

td(off)

Fall time

VGEN=-4.5V,VDD=-6V,

ID =-1.0A,RG=6Ω, RL=6Ω

Notes : a. Pulse Test : pulse width ≤300µs, duty cycle ≤2%.

MOSFET ELECTRICAL CHARACTERISTICS

T =25

℃ unless otherwise specified

b. These parameters have no way to verify.

0.0

B C2321

P-Channel 20-V(D-S) MOSFET

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