PEMH2 datasheet(4/8 Pages) PHILIPS

Part #	PEMH2

Description	NPN resistor-equipped transistors; R1 = 47 kohm, R2 = 47 kohm

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

4 / 8 page

2001 Oct 22

Philips Semiconductors

Preliminary speciﬁcation

NPN resistor-equipped transistors;

R1=47k

Ω, R2 = 47 kΩ

PEMH2

CHARACTERISTICS

Tamb =25 °C; unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor

ICBO

collector-base cut-off current

VCB =50V; IE =0

−−

100

ICEO

collector-emitter cut-off current

VCE =50V; IB =0

−−

µA

VCE =30V; IB = 0; Tj = 150 °C

−−

µA

IEBO

emitter-base cut-off current

VEB =5V; IC =0

−−

µA

hFE

DC current gain

VCE =5V; IC =5mA

−−

VCEsat

collector-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

−−

150

Vi(off)

input off voltage

VCE =5V; IC = 100 µA

−

1.2

0.8

Vi(on)

input on voltage

VCE = 0.3 V; IC = 2 mA

1.6

−

input resistor

Ω

resistor ratio

0.8

1.2

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−−

2.5

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