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IXTN210P10T Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IXTN210P10T Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page  ISFM1146 eq IXTN210P10T P-Channel MOSFET Transistor www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0V, ID= -0.25mA -100 - - V IDSS Zero Gate Voltage Drain Current VDS= -100V, VGS= 0V - - -25 uA IGSS Gate-Body Leakage Current VGS= ±15V, VDS= 0V - - ± 200 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID= -0.25mA -2.5 - -4.5 V RDS(on) Drain-Source On-Resistance VGS= -10V, ID= -105A - - 7.5 mΩ VSD Diode Forward Voltage ISD= -100A, VGS= 0V - - -1.4 V PACKAGE OUTLINE (UNIT: MM) |
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