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PJS6602 Datasheet(PDF) 1 Page - Pan Jit International Inc. |
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PJS6602 Datasheet(HTML) 1 Page - Pan Jit International Inc. |
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1 / 9 page ![]() PJS6602 January 20,2022 PJS6602-REV.02 Page 1 20V Complementary Enhancement Mode MOSFET Voltage 20 / -20V Current 5.2 /-3.4A SOT-23 6L Unit: inch(mm) Features Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: SOT-23 6L Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0005 ounces, 0.014 grams Marking: SC2 PARAMETER SYMBOL N-Ch LIMIT P-Ch LIMIT UNITS Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS +12 +12 V Continuous Drain Current ID 5.2 -3.4 A Pulsed Drain Current(Note 4) IDM 20.8 -13.6 A Power Dissipation Ta=25oC PD 1.25 W Derate above 25oC 10 mW/ oC Operating Junction and Storage Temperature Range TJ,TSTG -55~150 oC Typical Thermal Resistance - Junction to Ambient(Note 3) RθJA 100 oC/W Maximum Ratings and Thermal Characteristics (TA=25 o C unless otherwise noted) |
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