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FQB5N90 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # FQB5N90
Description  isc N-Channel MOSFET Transistor
PDF  5 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FQB5N90 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor
FQB5N90
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
900
--
--
V
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID= 0.25mA
3.0
--
5.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 2.7A
--
--
2.3
Ω
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
--
--
±
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 900V; VGS= 0
--
--
10
uA
Ciss
Input Capacitance
VGS = 0V,
VDS = 25V,
f = 1.0MHz
--
1465
--
pF
Coss
Output Capacitance
--
132
--
Crss
Reverse Transfer Capacitance
--
24
--
Qg
Total Gate Charge
VDD=450V,
ID= 5.4A,
VGS= 0to +10V
--
38
--
nC
Qgs
Gate-Source Charge
--
8
--
Qgd
Gate-Drain Charge
--
15
--
td(on)
Turn-on Delay Time
ID= 5.4A,
VDS=450V,
Rg=9.1Ω,
VGS = 10V
--
23
--
ns
tr
Turn-on Rise Time
--
47
--
td(off)
Turn-off Delay Time
--
35
--
tf
Turn-off Fall Time
--
39
--
SOURCE-DRAIN BODY DIODE CHARACTERISTICS
Drain - Source Body Diode Characteristics
VSD
Diode Forward Voltage
ISD= 5.4A; VGS= 0V
--
--
1.5
V
trr
Reverse Recovery Time
VGS = 0 V, ISD = 5.4 A,
dif/dt=1000 A/µs,
--
392
--
ns
Qrr
Reverse Recovery Charge
--
1.5
--
uC



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