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S4D30120D Datasheet(PDF) 1 Page - SMC Diode Solutions Co. LTD |
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S4D30120D Datasheet(HTML) 1 Page - SMC Diode Solutions Co. LTD |
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1 / 7 page  Technical Data Data Sheet N2388, REV.C China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com S4D30120D S4D30120D 1200V SIC POWER SCHOTTKY RECTIFIER Description Circuit Diagram Features Applications Maximum Ratings: Characteristics Symbol Condition Max. Units Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR - 1200 V Average Rectified Forward Current IF (AV)1 Tc =25°C 46 (per leg) A 92 (per device) A IF (AV)2 Tc =148°C 15 (per leg) A 30 (per device) Peak One Cycle Non-Repetitive Surge Current (per leg) IFSM 10ms, Half Sine pulse, Tc = 25 C 130 A Repetitive Peak Forward Surge Current (per leg) IFRM 10ms, Half Sine pulse, Tc = 25 C 68 A Power Dissipation (per leg) Ptot1 Tc =25℃ 178.6 W Ptot1 Tc =110℃ 77.4 W TO-247AD(TO-247-3) Alternative energy inverters Power Factor Correction (PFC) Free-Wheeling diodes Switching supply output rectification Reverse polarity protection S4D30120D is a single SiC Schottky rectifier packaged in TO-247AD(TO-247-3) case. The device is a high voltage Schottky rectifier that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S4D30120D is ideal for energy sensitive, high frequency applications in challenging environments. 175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All SMC parts are traceable to the wafer lot Additional electrical and life testing can be performed upon request |
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