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2SB1412-252 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1412-252 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Silicon PNP Power Transistor 2SB1412 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.1A -- -- -1.0 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50uA; IB= 0 -30 -- -- V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 -20 -- -- V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50uA; IC= 0 -6 -- -- V ICBO Collector Cutoff Current VCB= -20V; IE= 0 -- -- -0.5 uA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -- -- -0.5 uA hFE DC Current Gain IC= -0.5A; VCE= -2V 82 -- 390 COB Output Capacitance IE= 0; VCB= -20V; f= 1.0MHz -- 60 -- pF fT Current-Gain—Bandwidth Product IC= -50mA; VCE= -6V -- 120 -- MHz hFE Classifications P Q R 82-180 120-270 180-390 |
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