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2SB907-252 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB907-252 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Silicon PNP Power Transistor 2SB907 www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) · DC Current Gain- : hFE= 2000(Min)@ IC= -1A · Fast switching speed · Large current capacity · Complementary to 2SD1222 APPLICATIONS · Power amplifier applications · Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A IB Base current -0.3 A PC Total Power Dissipation @ TC=25℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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