2SC4135 datasheet(1/2 Pages) ISC

Part #	2SC4135

Description	Silicon NPN Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Silicon NPN Power Transistor

2SC4135

www.iscsemi.com

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 100V(Min)

·

DC Current Gain-

: hFE= 100(Min)@ IC= 0.1A

·

Fast switching speed

·

Large current capacity

APPLICATIONS

·

Power amplifier applications

·

Driver stage amplifier applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

120

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

2

A

ICM

Collector Current-Peak

3

A

PC

Collector Power Dissipation

@ TC=25℃

15

W

Collector Power Dissipation

@Ta=25℃

1.0

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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2SC4135 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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