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NTMFS4833N Datasheet(PDF) 5 Page - ON Semiconductor

Part # NTMFS4833N
Description  Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
PDF  7 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTMFS4833N Datasheet(HTML) 5 Page - ON Semiconductor

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NTMFS4833N
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
tr
td(off)
td(on)
tf
VGS
−10
0
10
15
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
6000
0
VGS
VDS
−5
5
TJ = 25°C
Ciss
Coss
Crss
Ciss
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
0
4
0
QG, TOTAL GATE CHARGE (nC)
2
8
40
ID = 30 A
TJ = 25°C
QT
50
0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
RG, GATE RESISTANCE (W)
1
10
100
1000
VGS = 0 V
Figure 10. Diode Forward Voltage vs. Current
100
0.2
0.4
5
10
15
10
VDD = 15 V
ID = 15 A
VGS = 11.5 V
0.6
0.8
20
30
25
TJ = 25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
1 ms
100
ms
10 ms
dc
10
ms
20
1
100
0
25
TJ, STARTING JUNCTION TEMPERATURE (°C)
ID = 35 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50
75
50
200
300
100
125
350
650
150
1000
100
25
8000
5000
4000
3000
2000
0
1.0
500
6
20
10
30
80
70
60
Q1
550
600
12
90
7000
VDS = 0 V VGS = 0 V
10
Q2
0.01
0.1
150
250
400
450



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