Electrical Characteristics (TJ=25℃ unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Off Characteristic

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

40

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=40V, VGS=0V,

-

-

1.0

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS= ±20V

-

-

±100

nA

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

1.0

3.0

V

RDS(on)

Static Drain-Source on-

Resistance

note3

VGS=10V, ID=30A

-

5.0

mΩ

VGS=4.5V, ID=20A

-

10

Dynamic Characteristics

Ciss

Input Capacitance

VDS=20V,

VGS=0V,

f=1.0MHz

-

3800

-

pF

Coss

Output Capacitance

-

280

-

pF

Crss

Reverse Transfer Capacitance

-

230

-

pF

Qg

Total Gate Charge

VDS=20V,

ID=30A, VGS=10V

-

57

-

nC

Qgs

Gate-Source Charge

-

9

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

11

-

nC

Switching Characteristics

td(on)

Turn-on Delay Time

VDD=20V,

ID=30A,

RL=1Ω,

RGEN=3Ω,

VGS=10V

-

8

-

ns

tr

Turn-on Rise Time

-

18

-

ns

td(off)

Turn-off Delay Time

-

24

-

ns

tf

Turn-off Fall Time

-

14

-

ns

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain to Source Diode

Forward Current

-

-

80

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

320

A

VSD

Drain to Source Diode Forward

Voltage

VGS=0V, IS=30A

-

-

1.2

V

trr

Body Diode Reverse Recovery Time

TJ=25℃,

IF=20A,dI/dt=100A/μs

-

22

-

ns

Qrr

Body Diode Reverse Recovery

Charge

-

11

-

nC

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

2. EAS condition: TJ=25℃, VDD=20V, RG=25Ω，L=0.5mH, IAS=20.4A

3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%

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FDD8447L

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