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KTA1045D Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # KTA1045D
Description  Silicon PNP Power Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

KTA1045D Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  KTA1045D Datasheet HTML 1Page - Inchange Semiconductor Company Limited KTA1045D Datasheet HTML 2Page - Inchange Semiconductor Company Limited KTA1045D Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Silicon PNP Power Transistor
KTA1045D
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO *
Collector-Emitter Breakdown Voltage
IC= -1mA; IB= 0
-120
--
--
V
V(BR)CBO *
Collector-Base Breakdown Voltage
IC= -10uA; IB= 0
-120
--
--
V
V(BR)EBO *
Emitter-Base Breakdown Voltage
IC= -10uA; IB= 0
-5
--
--
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC=-0.5A; IB= -0.05A
--
--
-0.4
V
VBE(sat)
Base-Emitter Saturation voltage
IC=-0.5A; IB= -0.05A
--
--
-1.2
V
ICBO
Collector Cutoff Current
VCB=- 50V; IE= 0
--
--
-1
uA
IEBO
Emitter Cutoff Current
VEB=-4V; IC= 0
--
--
-1
uA
hFE1
DC Current Gain
IC= -0.05A; VCE= -5V
100
--
320
hFE2
DC Current Gain
IC=- 0.5A; VCE= -5V
20
--
--
fT
Current-Gain—Bandwidth Product
IC=- 1A; VCE= -5V
--
30
--
MHz
COB
Output Capacitance
IE=0;
VCB= -10V; f= 1.0MHz
--
110
--
pF
hFE1 Classifications
Y
GR
100-200 160-320



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