Silicon PNP Power Transistor

KTA1718D

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO *

Collector-Emitter Breakdown Voltage

IC= -10mA; IB= 0

-50

--

--

V

V(BR)CBO *

Collector-Base Breakdown Voltage

IC= -10uA; IB= 0

-50

--

--

V

V(BR)EBO *

Emitter-Base Breakdown Voltage

IC= -10uA; IB= 0

-5

--

--

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC=-1A; IB= -0.05A

--

--

-0.5

V

VBE(sat)

Base-Emitter Saturation voltage

IC=-1A; IB= -0.05A

--

--

-1.2

V

ICBO

Collector Cutoff Current

VCB= -50V; IE= 0

--

--

-0.1

uA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

--

--

-0.1

uA

hFE1

DC Current Gain

IC= -0.5A; VCE= -2V

70

--

240

hFE2

DC Current Gain

IC=- 1.5A; VCE= -2V

40

--

--



hFE2 Classifications

O

Y

70-140

120-240

PRODUCT DISCLAIMER

ISC reserves the rights to make changes of the content herein the datasheet at any time without