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STFV4N150 Datasheet(PDF) 5 Page - STMicroelectronics |
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STFV4N150 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 13 page ![]() STFV4N150 Electrical characteristics 5/13 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 750V, ID = 2A, RG = 4.7Ω, VGS = 10V (see Figure 14) 35 30 45 45 ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) 4 12 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Forward on voltage ISD = 4A, VGS = 0 2 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4A, di/dt = 100A/µs VDD = 45V (see Figure 19) 510 3 12 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4A, di/dt = 100A/µs VDD = 45V, Tj = 150°C (see Figure 19) 650 4 12.6 ns µC A |
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