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STFV4N150 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STFV4N150
Description  N-channel 1500V - 5廓 - 4A - TO-220FH Very high voltage PowerMESH??Power MOSFET
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STFV4N150 Datasheet(HTML) 5 Page - STMicroelectronics

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STFV4N150
Electrical characteristics
5/13
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 750V, ID = 2A,
RG = 4.7Ω, VGS = 10V
(see Figure 14)
35
30
45
45
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)
4
12
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward on voltage
ISD = 4A, VGS = 0
2
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4A, di/dt = 100A/µs
VDD = 45V (see Figure 19)
510
3
12
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4A, di/dt = 100A/µs
VDD = 45V, Tj = 150°C
(see Figure 19)
650
4
12.6
ns
µC
A



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