PHT1N52S datasheet(2/5 Pages) PHILIPS

2 / 5 page

Philips Semiconductors

Objective specification

PowerMOS transistor

PHT1N52S

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

th j-sp

Thermal resistance junction to

K/W

solder point

th j-a

Thermal resistance junction to

pcb mounted; minimum footprint

156

K/W

ambient

pcb mounted; pad area as in fig:2

K/W

STATIC CHARACTERISTICS

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

(BR)DSS

Drain-source breakdown volt-

GS = 0 V; ID = 0.25 mA

520

age

GS(TO)

Gate threshold voltage

DS = VGS; ID = 0.25 mA

2.0

3.0

4.0

DSS

Drain-source leakage current

DS = 500 V; VGS = 0 V; Tj = 25 ˚C

100

µA

DS = 400 V; VGS = 0 V; Tj = 125 ˚C

0.1

1.0

GSS

Gate-source leakage current

GS = ±35 V; VDS = 0 V

100

DS(ON)

Drain-source on-state resis-

GS = 10 V; ID = 1 A

7.9

Ω

tance

Source-drain diode forward

F = 2 A ;VGS = 0 V

0.85

1.2

voltage

DYNAMIC CHARACTERISTICS

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Forward transconductance

DS = 15 V; ID = 1 A

0.5

0.8

iss

Input capacitance

GS = 0 V; VDS = 25 V; f = 1 MHz

100

oss

Output capacitance

rss

Feedback capacitance

g(tot)

Total gate charge

GS = 10 V; ID = 2 A; VDS = 400 V

Gate to source charge

Gate to drain (Miller) charge

d on

Turn-on delay time

DD = 30 V; ID = 2 A;

Turn-on rise time

GS = 10 V; RGS = 50 Ω;

d off

Turn-off delay time

GEN = 50 Ω

1520ns

Turn-off fall time

Source-drain diode Reverse

F = 2 A; -dIF/dt = 100 A/µs;

150

recovery time

Source-drain diode Reverse

GS = 0 V; VR = 100 V

1.5

µC

recovery charge

February 1998

Rev 1.000

PHT1N52S Datasheet(PDF) 2 Page - NXP Semiconductors

PHT1N52S Datasheet(HTML) 2 Page - NXP Semiconductors

Html Pages

1 2 3 4 5

Datasheet Download

Link URL