PHT4NQ10LT datasheet(2/13 Pages) PHILIPS

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Philips Semiconductors

PHT4NQ10LT

N-channel enhancement mode ﬁeld-effect transistor

Product speciﬁcation

Rev. 01 — 11 September 2000

2 of 13

9397 750 07342

Quick reference data

Limiting values

Table 2:

Quick reference data

Symbol Parameter

Conditions

Typ

Max

Unit

VDS

drain-source voltage (DC)

Tj =25to150 °C

−

100

drain current (DC)

Tsp =25 °C; VGS =5V

−

3.5

Ptot

total power dissipation

Tsp =25 °C

−

6.9

junction temperature

−

150

°C

RDSon

drain-source on-state resistance

VGS =5V; ID = 1.75 A

200

250

Ω

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage (DC)

Tj =25to150 °C

−

100

VDGR

drain-gate voltage (DC)

Tj =25to150 °C; RGS =20kΩ−

100

VGS

gate-source voltage (DC)

−±16

drain current (DC)

Tsp =25 °C; VGS =5V; Figure 2 and 3

−

3.5

Tsp = 100 °C; VGS =5V;

−

2.2

IDM

peak drain current

Tsp =25 °C; pulsed; tp ≤ 10 µs; Figure 3

−

Ptot

total power dissipation

Tsp =25 °C; Figure 1

−

6.9

Tstg

storage temperature

−65

+150

°C

operating junction temperature

−65

+150

°C

Source-drain diode

source (diode forward) current (DC)

Tsp =25 °C

−

3.5

ISM

peak source (diode forward) current Tsp =25 °C; tp ≤ 10 µs

−

Avalanche ruggedness

EAS

non-repetitive avalanche energy

unclamped inductive load; ID = 3.5 A;

tp = 0.2 ms; VDD ≤ 15 V; RGS =50 Ω;

VGS = 5 V; starting Tj =25 °C; Figure 4

−

IAS

non-repetitive avalanche current

unclamped inductive load; VDD ≤ 15 V;

RGS =50 Ω; VGS =5V; Figure 4

−

3.5

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