PIP3119-P datasheet(3/6 Pages) PHILIPS

3 / 6 page

Philips Semiconductors

Product specification

Logic level TOPFET

PIP3119-P

OUTPUT CHARACTERISTICS

Limits are for -40˚C

≤ T

mb ≤ 150˚C; typicals are for Tmb = 25˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Off-state

IS = 0 V

(CL)DSS

Drain-source clamping voltage

D = 10 mA

DM = 4 A; tp ≤ 300 µs; δ ≤ 0.01

DSS

Drain source leakage current

DS = 40 V

100

µA

mb = 25˚C

0.1

µA

On-state

IS ≥ 4.4 V; tp ≤ 300 µs; δ ≤ 0.01

DS(ON)

Drain-source resistance

DM = 10 A

Ω

mb = 25˚C

Ω

OVERLOAD CHARACTERISTICS

IS = 5 V; Tmb = 25˚C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Short circuit load

Drain current limiting

DS = 13 V

28.5

4.4 V

≤ V

IS ≤ 5.5 V;

-40˚C

≤ T

mb ≤ 150˚C

Overload protection

D(TO)

Overload power threshold

device trips if P

D > PD(TO)

185

250

DSC

Characteristic time

which determines trip time

200

380

600

µs

Overtemperature protection

j(TO)

Threshold junction

150

170

˚C

temperature

1 Trip time t

d sc varies with overload dissipation PD according to the formula td sc ≈ TDSC / ln[ PD / PD(TO)].

2 This is independent of the dV/dt of input voltage V

IS.

May 2001

Rev 1.000

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