FDV301N datasheet(3/7 Pages) EVVOSEMI

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.5

1.0

1.5

2.0

VGS =10Vthru3V

VGS =2.5V

VGS =1V

VDS - Drain-to-Source Voltage (V)

0.020

0.025

0.030

0.035

0.040

0.045

VGS =1.8 V

VGS =4.5 V

VGS =2.5 V

ID - Drain Current (A)

2468

VDS =16V

ID =5A

VDS =10V

VDS =5V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.3

0.6

0.9

1.2

1.5

TC = 25 °C

TC =125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

300

600

900

1200

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.70

0.95

1.20

1.45

1.70

- 50

- 25

100

125

150

VGS = 2.5 V, I = 4.7 A

VGS =4.5 V, ID =5 A

TJ - Junction Temperature (°C)

N-Channel 20 V (D-S) MOSFET

FDV301N

Rev:2023A2

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