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IRF7303 Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # IRF7303
Description  Dual N-Channel MOSFET
PDF  8 Pages
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Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

IRF7303 Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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Description
Parameter
Max.
Units
ID @ TA = 25°C
10 Sec. Pulsed Drain Current, VGS @ 10V
5.3
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
4.9
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
3.9
IDM
Pulsed Drain Current 
20
PD @TA = 25°C
Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/°C
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak Diode Recovery dv/dt ‚
5.0
V/ns
TJ,TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
A
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient„
62.5
°C/W
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IRF7303
Rev:2023A2
1
D1
D1
D2
D2
G1
S2
G2
S1
8
1
2
3
4
5
6
7
SOP-8
Generation VTechnology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Dynamic dv/dt Rating
Fast Switching
Lead-Free
VDS (V) = 30V
ID = 5.3 A
RDS(ON)
50m
(VGS = -10V)
RDS(ON)
80m (VGS = -4.5V)
Features
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The SOP-8 has been modied through a customizec
leadframe for enhanced thermal characteristics and
multiple die capability making it ideal in a variety of
power applications.
With these improvements. multiple devices can be
used in an application with dramatically reduced board
space.
The package is designed for vapor phase. intra red. or
wave soldering techniques. Power dissipation of gre-
ater than 0.8W is possible in a typical PCB mount app-
lication.


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