Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

55

V

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

0.059

V/°C Reference to 25°C, ID = 1mA

30

VGS = 10V, ID = 4.7A

„

45

VGS = 4.5V, ID = 3.8A

„

VGS(th)

Gate Threshold Voltage

1.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

7.9

S

VDS = 10V, ID = 4.5A

2.0

VDS = 55V, VGS = 0V

25

VDS = 55V, VGS = 0V, TJ = 55°C

Gate-to-Source Forward Leakage

-100

VGS = -20V

Gate-to-Source Reverse Leakage

100

VGS = 20V

Qg

Total Gate Charge

24

36

ID = 4.5A

Qgs

Gate-to-Source Charge

2.3

3.4

nC

VDS = 44V

Qgd

Gate-to-Drain ("Miller") Charge

7.0

10

VGS = 10V, See Fig. 10

„

td(on)

Turn-On Delay Time

8.3

12

VDD = 28V

tr

Rise Time

3.2

4.8

ID = 1.0A

td(off)

Turn-Off Delay Time

32

48

RG = 6.0Ω

tf

Fall Time

13

20

RD = 16Ω,

„

Ciss

Input Capacitance

740

VGS = 0V

Coss

Output Capacitance

190

pF

VDS = 25V

Crss

Reverse Transfer Capacitance

71

ƒ = 1.0MHz, See Fig. 9

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

µA

Ω

RDS(on)

StaticDrain-to-SourceOn-Resistance

IDSS

Drain-to-SourceLeakageCurrent

nA

ns

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)



p-n junction diode.

VSD

Diode Forward Voltage

1.2

V

TJ = 25°C, IS = 2.0A, VGS = 0V

ƒ

trr

Reverse Recovery Time

60

90

ns

TJ = 25°C, IF = 2.0A

Qrr

Reverse RecoveryCharge

120

170

nC

di/dt = -100A/µs

ƒ

Source-Drain Ratings and Characteristics

38

2.0

A

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ƒ ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Notes:

‚ Starting TJ = 25°C, L = 6.5mH

RG = 25Ω, IAS = 4.7A. (See Figure 8)

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

… When mounted on 1 inch square copper board, t<10 sec

S

D

G

m

Rev:2023A2

2

IRF7341