95 105

V

150

170

V

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

-55

V

VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

-0.054

V/°C Reference to 25°C, ID = -1mA

GS = -10V, ID = -3.4A

„

GS = -4.5V, ID = -2.7A

„

VGS(th)

Gate Threshold Voltage

-1.0

V

VDS = VGS, ID = -250µA

gfs

Forward Transconductance

3.3

S

VDS = -10V, ID = -3.1A

-2.0

VDS = -55V, VGS = 0V

-25

VDS = -55V, VGS = 0V, TJ = 55°C

Gate-to-Source Forward Leakage

-100

VGS = -20V

Gate-to-Source Reverse Leakage

100

VGS = 20V

Qg

Total Gate Charge

26

38

ID = -3.1A

Qgs

Gate-to-Source Charge

3.0

4.5

nC

VDS = -44V

Qgd

Gate-to-Drain ("Miller") Charge

8.4

13

VGS = -10V, See Fig. 10

„

td(on)

Turn-On Delay Time

14

22

VDD = -28V

tr

Rise Time

10

15

ID = -1.0A

td(off)

Turn-Off Delay Time

43

64

RG = 6.0Ω

tf

Fall Time

22

32

RD = 16Ω,

„

Ciss

Input Capacitance

690

VGS = 0V

Coss

Output Capacitance

210

pF

VDS = -25V

Crss

Reverse Transfer Capacitance

86

ƒ = 1.0MHz, See Fig. 9

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

µA

Ω

RDS(on)

StaticDrain-to-SourceOn-Resistance

IDSS

Drain-to-SourceLeakageCurrent

nA

ns

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)



p-n junction diode.

VSD

Diode Forward Voltage

-1.2

V

TJ = 25°C, IS = -2.0A, VGS = 0V

ƒ

trr

Reverse Recovery Time

54

80

ns

TJ = 25°C, IF = -2.0A

Qrr

Reverse RecoveryCharge

85

130

nC

di/dt = -100A/µs

ƒ

Source-Drain Ratings and Characteristics

-27

-2.0

A

S

D

G

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ƒ ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Notes:

‚ Starting TJ = 25°C, L = 20mH

RG = 25Ω, IAS = -3.4A. (See Figure 8)

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

… When mounted on 1 inch square copper board, t<10 sec

Rev:2023A2

2

m

IRF7342

Dual P-Channel MOSFET