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IRF7455 Datasheet(PDF) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # IRF7455
Description  MOSFET
PDF  8 Pages
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Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

IRF7455 Datasheet(HTML) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

  IRF7455 Datasheet HTML 1Page - EVER SEMICONDUCTOR CO.,LIMITED IRF7455 Datasheet HTML 2Page - EVER SEMICONDUCTOR CO.,LIMITED IRF7455 Datasheet HTML 3Page - EVER SEMICONDUCTOR CO.,LIMITED IRF7455 Datasheet HTML 4Page - EVER SEMICONDUCTOR CO.,LIMITED IRF7455 Datasheet HTML 5Page - EVER SEMICONDUCTOR CO.,LIMITED IRF7455 Datasheet HTML 6Page - EVER SEMICONDUCTOR CO.,LIMITED IRF7455 Datasheet HTML 7Page - EVER SEMICONDUCTOR CO.,LIMITED IRF7455 Datasheet HTML 8Page - EVER SEMICONDUCTOR CO.,LIMITED  
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Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
1.2
V
TJ = 25°C, IS = 2.5A, VGS = 0V
ƒ
trr
Reverse Recovery Time
64
96
ns
TJ = 25°C, IF = 2.5A, VR= 20V
Qrr
Reverse Recovery Charge
99
150
nC
di/dt = 100A/µs
ƒ
S
D
G
Diode Characteristics
2.5
120
A
VSD
Diode Forward Voltage
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
300
mJ
IAR
Avalanche Current

15
A
Avalanche Characteristics
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
0.029
V/°C
Reference to 25°C, I D = 1mA
6.0
7.5
VGS = 10V, ID = 15A
„
6.9
9
m
Ω
VGS = 4.5V, ID = 12A
„
10
2
VGS = 2.8V, ID = 3.5A
„
VGS(th)
Gate Threshold Voltage
0.6
2.0
V
VDS = VGS, ID = 250µA
20
µA
VDS = 24V, VGS = 0V
100
VDS = 24V, VGS = 0V, TJ = 125C
Gate-to-Source Forward Leakage
200
VGS = 12V
Gate-to-Source Reverse Leakage
-200
nA
VGS = -12V
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
44
S
VDS = 10V, ID = 15A
Qg
Total Gate Charge
37
56
ID = 15A
Qgs
Gate-to-Source Charge
8.9
13
nC
VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
13
20
VGS = 5.0V
ƒ
Qoss
Output Gate Charge
23
35
VGS = 0V, VDS = 16V
td(on)
Turn-On Delay Time
17
VDD = 15V
tr
Rise Time
18
ID = 1.0A
td(off)
Turn-Off Delay Time
51
RG = 6Ω
tf
Fall Time
44
VGS = 4.5V
ƒ
Ciss
Input Capacitance
3480
VGS = 0V
Coss
Output Capacitance
870
VDS = 25V
Crss
Reverse Transfer Capacitance
100
pF
ƒ = 1.0MHz
Rev:2023A2
2
IRF7455



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