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C3M0060065D Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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C3M0060065D Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISCF8048 eq C3M0060065D SiC N-Channel MOSFET www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0V, ID= 0.1mA 650 -- -- V VGS(th) Gate Threshold Voltage VDS = 10V, ID =5mA 1.8 -- 3.6 V RDS(ON) Drain-Source On-stage Resistance VGS=15V, ID=13.2A -- 60 79 mΩ IGSS Gate Source Leakage Current VGS= 15V, VDS= 0V -- -- 250 nA IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V -- -- 50 μA VSD Diode Forward Voltage ISD= 6.6A, VGS=-4V -- 5.1 -- V PACKAGE OUTLINE Dimensions in mm (1mm = 0.0394“) |
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