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IPB010N06N Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IPB010N06N Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISF1187 eq IPB010N06N N-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= 180A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · Automatic Test Equipment · High-Side Switching Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 180 A IDM Drain Current-Single Pulse 720 A PD Total Dissipation @TC=25℃ 300 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.5 ℃ /W |
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