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TPC8107 Datasheet(PDF) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # TPC8107
Description  P-Channel 30 V (D-S) MOSFET
PDF  8 Pages
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Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

TPC8107 Datasheet(HTML) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

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Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 30
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = - 250 µA
- 34
mV/
°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
5.3
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1.4
- 2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 25 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
- 1
µA
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 5
On-State Drain Currenta
ID(on)
VDS ≥ - 10 V, VGS = - 10 V
- 30
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 10 A
11
Ω
VGS = - 4.5 V, ID = - 8 A
15
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 10 A
28
S
Dynamicb
Input Capacitance
Ciss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
2550
pF
Output Capacitance
Coss
455
Reverse Transfer Capacitance
Crss
390
Total Gate Charge
Qg
VDS = - 15 V, VGS = - 10 V, ID = - 10 A
57
86
nC
VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A
29.5
45
Gate-Source Charge
Qgs
8
Gate-Drain Charge
Qgd
22
Gate Resistance
Rg
f = 1 MHz
0.5
2.2
4.4
Ω
Turn-On Delay Time
td(on)
VDD = - 15 V, RL = 1.5 Ω
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω
13
25
ns
Rise Time
tr
12
24
Turn-Off DelayTime
td(off)
40
70
Fall Time
tf
918
Turn-On Delay Time
td(on)
VDD = - 15 V, RL = 1.5 Ω
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
48
80
Rise Time
tr
92
160
Turn-Off DelayTime
td(off)
34
60
Fall Time
tf
19
35
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
TC = 25 °C
- 4.1
A
Pulse Diode Forward Current
ISM
- 60
Body Diode Voltage
VSD
IS = - 3 A, VGS = 0 V
- 0.75
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
27
45
ns
Body Diode Reverse Recovery Charge
Qrr
16
27
nC
Reverse Recovery Fall Time
ta
12
ns
Reverse Recovery Rise Time
tb
15
P-Channel 30 V (D-S) MOSFET
TPC8107
Rev:2023A2
2
m



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