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FDN308P Datasheet(PDF) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # FDN308P
Description  P-Channel 2.5 V (D-S) MOSFET
PDF  5 Pages
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Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

FDN308P Datasheet(HTML) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED

  FDN308P Datasheet HTML 1Page - EVER SEMICONDUCTOR CO.,LIMITED FDN308P Datasheet HTML 2Page - EVER SEMICONDUCTOR CO.,LIMITED FDN308P Datasheet HTML 3Page - EVER SEMICONDUCTOR CO.,LIMITED FDN308P Datasheet HTML 4Page - EVER SEMICONDUCTOR CO.,LIMITED FDN308P Datasheet HTML 5Page - EVER SEMICONDUCTOR CO.,LIMITED  
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Typical Characteristics
0
2
4
6
8
10
0123
4
-VDS, DRAIN-SOURCE VOLTAGE (V)
-4.0V
-2.0V
-2.5V
VGS = -4.5V
-3.0V
-3.5V
0.8
1
1.2
1.4
1.6
1.8
2
02468
10
-ID, DRAIN CURRENT (A)
VGS = -2.5V
-4.0V
-4.5V
-3.0V
-3.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (
oC)
I
D = -1.5A
V
GS = -4.5V
0.06
0.1
0.14
0.18
0.22
0.26
0.3
0.34
1
234
5
-VGS, GATE TO SOURCE VOLTAGE (V)
ID = -0.8 A
T
A = 125
oC
TA = 25
oC
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
2
4
6
8
10
0.5
1
1.5
2
2.5
3
3.5
-VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55
oC
25
oC
VDS = - 5V
125
oC
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
T
A = 125
oC
25
oC
-55
oC
VGS = 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
P-Channel 2.5 V (D-S) MOSFET
FDN308
Rev:2023A2
3



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