1997 Feb 18

2

Philips Semiconductors

Product specification

NPN microwave power transistors

PTB32001X; PTB32003X;

PTB32005X

FEATURES

• Diffused emitter ballasting resistors providing excellent

current sharing and withstanding a high VSWR

• Interdigitated structure provides high emitter efficiency

• Multicell geometry gives good balance of dissipated

power and low thermal resistance

• Localized thick oxide auto-alignment process and gold

sandwich metallization ensure an optimum temperature

profile and excellent performance and reliability.

APPLICATIONS

Common-base, class B power amplifiers up to 4.2 GHz.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in

a metal ceramic SOT440A flange package with base

connected to the flange.

PINNING - SOT440A

PIN

DESCRIPTION

1

collector

2

emitter

3

base connected to flange

Fig.1 Simplified outline and symbol.

olumns

e

c

b

MAM131

3

1

2

Top view

MARKING

TYPE NUMBER

MARKING CODE

PTB32001X

3201X

PTB32003X

3203X

PTB32005X

3205X

QUICK REFERENCE DATA

TYPE NUMBER

MODE OF

OPERATION

f

(GHz)

(V)

(W)

(dB)

(%)

(

Ω)

(

Ω)

PTB32001X

CW

3

24

≥1.3

≥8

≥35

15 + j31

5.5 + j10

PTB32003X

CW

3

24

≥2.5

≥8

≥35

5.5 + j29

5

− j2.2

PTB32005X

CW

3

24

≥4.5

≥8

≥35

2.8 + j20

4

− j7

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.