FDN340P datasheet(1/3 Pages) EVVOSEMI

Part #	FDN340P

Description	SOT-23 Plastic-Encapsulate MOSFETS

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

Direct Link	https://www.evvosemi.com

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FDN340P

P-Channel 20-V(D-S) MOSFET

V(BR)DSS

RDS(on)MAX

ID

-20 V

70mΩ@ -4.5V

-2A

110mΩ@ -2.5V

210mΩ@ -1.8V

FEATURE

APPLICATION

● TrenchFET Power MOSFET

※

Battery protection

● Supper high density cell design

※

Load switch

※

Battery management

MARKING

Maximum ratings ( Ta=25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

±8

Continuous Drain Current

ID

-2

A

Pulsed Diode Curren

IDM

-10

Power Dissipation

PD

1.1

W

Thermal Resistance from Junction to Ambient (t≤10s)

RθJA

250

℃

/W

Operating Junction

TJ

150

℃

Storage Temperature

TSTG

-55~+150

℃

SOT-23 Plastic-Encapsulate MOSFETS

FDN340P

SOT–23

1. GATE

2. SOURCE

3. DRAIN

Equivalent Circuit

Rev:2023A2

1

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FDN340P Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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