PUMB3 datasheet(4/8 Pages) PHILIPS

4 / 8 page

2001 Sep 19

Philips Semiconductors

Product speciﬁcation

PNP resistor-equipped double transistor; R1 = 4.7 k

Ω

PUMB3

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor

ICBO

collector-base cut-off current

VCB = −50 V; IE =0

−−−100

ICEO

collector-emitter cut-off current

VCE = −30 V; IB =0

−−−1

µA

VCE = −30 V; IB = 0; Tj = 150 °C −−−50

µA

IEBO

emitter-base cut-off current

VEB = −5 V; IC =0

−−−100

hFE

DC current gain

VCE = −5 V; IC = −1 mA

200

−−

VCEsat

saturation voltage

IC = −5 mA; IB = −0.25 mA

−−−100

input resistor

3.3

4.7

6.1

Ω

collector capacitance

IE =ie = 0; VCB = −10 V;

f = 1 MHz

−−

3pF

handbook, halfpage

103

102

MHB969

−10−1

−1

IC (mA)

hFE

−10

−102

(1)

(2)

(3)

Fig.3

DC current gain as a function of collector

current; typical values.

VCE =

−5V.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

−103

−102

−10

MHB968

−10−1

−1

IC (mA)

VCEsat

(mV)

−10

−102

(1)

(2)

(3)

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

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