FDS6681Z datasheet(4/8 Pages) EVVOSEMI

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TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

Single Pulse Power, Junction-to-Ambient

Safe Operating Area, Junction-to-Ambient

100

1000

10000

0.001

0.01

0.1

100

0.2

0.4

0.6

0.8

1.0

1.2

Axis Title

SD - Source-to-Drain Voltage (V)

2nd line

J = 150 °C

J = 25 °C

100

1000

10000

0.004

0.008

0.012

0.016

0.020

02468

Axis Title

GS - Gate-to-Source Voltage (V)

2nd line

J = 25 °C

J = 125 °C

D = 15 A

100

1000

10000

-0.5

-0.2

0.1

0.4

0.7

1.0

-50

-25

100

125

150

Axis Title

J - Temperature (°C)

2nd line

D = 5 mA

D = 250 μA

100

1000

10000

120

150

0.001

0.01

0.1

Axis Title

Time (s)

2nd line

100

1000

10000

0.01

0.1

100

1000

0.01

0.1

100

Axis Title

DS - Drain-to-Source Voltage (V)

(1) V

GS > minimum VGS at which RDS(on) is specified

DM limited

Limited by R

DS(on)

(1)

A = 25 °C

Single pulse

BVDSS limited

100 ms

10 ms

1 ms

100 μs

10 s

1 s

D limited

Rev:2023A2

P-Channel 30 V (D-S) MOSFET

FDS6681Z

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