1999 Apr 14

2

Philips Semiconductors

Preliminary specification

NPN/PNP general purpose transistors

PUMZ1

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 40 V)

• Reduces number of components and boardspace.

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

Two independently operating NPN/PNP transistors in an

SC-88 plastic package.

MARKING

TYPE NUMBER

MARKING CODE

PUMZ1

FtZ

PINNING

PIN

DESCRIPTION

1, 4

emitter

TR2; TR1

2, 5

base

TR2; TR1

3, 6

collector

TR2; TR1

Fig.1 Simplified outline (SC-88) and symbol.

handbook, halfpage

13

2

4

5

6

Top view

MAM341

13

2

TR1

TR2

6

4

5

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor; for the PNP transistor with negative polarity

collector-base voltage

open emitter

−

50

V

collector-emitter voltage

open base

−

40

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

100

mA

peak collector current

−

200

mA

peak base current

−

200

mA

total power dissipation

−

200

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

Per device

total power dissipation

−

300

mW