PXT2222A datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 14

Philips Semiconductors

Product speciﬁcation

NPN switching transistor

PXT2222A

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

100

K/W

Rth j-s

thermal resistance from junction to soldering point

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =60V

−

IE = 0; VCB = 60 V; Tamb = 125 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VBE =5V

−

hFE

DC current gain

IC = 0.1 mA; VCE = 10V

−

IC = 1 mA; VCE =10V

−

IC = 10 mA; VCE =10V

−

IC = 10 mA; VC =10V; Tamb = −55 °C35

−

IC = 150 mA; VCE =1V

−

IC = 150 mA; VCE = 10 V

100

300

IC = 500 mA; VCE =10V

−

VCEsat

collector-emitter saturation

voltage

IC = 150 mA; IB =15mA

−

300

IC = 500 mA; IB =50mA

−

VBEsat

base-emitter saturation voltage

IC = 150 mA; IB = 15 mA

0.6

1.2

IC = 500 mA; IB =50mA

−

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

8pF

emitter capacitance

IC =ic = 0; VEB = 500 mV; f = 1 MHz

−

transition frequency

IC = 20 mA; VCE = 10 V; f = 100 MHz

300

−

MHz

noise ﬁgure

IC = 200 µA; VCE =5V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

−

4dB

Switching times (between 10% and 90% levels); (see Fig.2)

ton

turn-on time

ICon = 150 mA; IBon =15mA;

IBoff = −15 mA

−

delay time

−

rise time

−

toff

turn-off time

−

250

storage time

−

200

fall time

−

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